characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 14a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) 050-7037 rev c 2-2009 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 1000 28 0.37 250 1000 100 35 apt10035 1000 28 112 30 40 690 5.5 -55 to 150 300 28 50 3000 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max? g d s to-264 b2fll lfll apt10035b2fll(g) apt10035lfll (g) 1000v 28a 0.3 7 ?? ?? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package ? fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. power mos 7 r fredfet
050-7037 rev c 2-2009 dynamic characteristics apt10035b2fll - lfll source-drain diode ratings and characteristics thermal characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -28a) peak diode recovery dv / dt 5 reverse recovery time (i s = -28a, di / dt = 100a/s) reverse recovery charge (i s = -28a, di / dt = 100a/s) peak recovery current (i s = -28a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 28 112 1.3 18 t j = 25c 320 t j = 125c 650 t j = 25c 3.60 t j = 125c 9.72 t j = 25c 16.5 t j = 125c 24.7 symbol r jc r ja min typ max 0.18 40 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 7.65mh, r g = 25 ? , peak i l = 28a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 28a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 28a @ 25c resistive switching v gs = 15v v dd = 500v i d = 28a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 670v, v gs = 15v i d = 28a, r g = 5 ? inductive switching @ 125c v dd = 670v v gs = 15v i d = 28a, r g = 5 ? min typ max 5185 881 160 186 24 122 12 10 36 9 900 623 1423 779 unit pf nc ns j note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05
050-7037 rev c 2-2009 r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 10 20 30 40 50 60 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 80 70 60 50 40 30 20 10 0 30 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 60 50 40 30 20 10 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 5.5v 6v 6.5v 7v 5v v gs =15,10 & 8v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle apt10035b2fll - lfll typical performance curves v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0.0271 0.0656 0.0859 0.00899f 0.0202f 0.293f power (watts) junction temp. ( ?c) rc model case temperature normalized to v gs = 10v @ 14a i d = 14a v gs = 10v
apt10035b2fll - lfll 050-7037 rev c 2-2009 20,000 10,000 1,000 100 200 100 10 1 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5 112 50 10 1 16 12 8 4 0 t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s v ds =500v v ds =200v v ds =800v i d = 28a i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 670v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 0 10 20 30 40 50 0 10 20 30 40 50 0 10 20 30 40 50 0 5 1015202530 35404550 180 160 140 120 100 80 60 40 20 0 2500 2000 1500 1000 500 0 80 60 40 20 0 5000 4000 3000 2000 1000 0 v dd = 670v r g = 5 ? t j = 125c l = 100h v dd = 670v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. v dd = 670v i d = 28a t j = 125c l = 100h e on includes diode reverse recovery. c rss c iss c oss t j =+150c t j =+25c
050-7037 rev c 2-2009 apt10035b2fll - lfll 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df120b v ce figure 20, inductive switching test circuit g v dd 90% t d(off) 90% 10% 0 t f t j = 125 c drain current drain voltage gate voltage switching energy switching energy 10 % t d(on) 90% 5 % t r 10 % 5 % gate voltage t j = 125 c drain current drain voltage
|
